PART |
Description |
Maker |
NM93C06EM8 NM93C06EMT8 NM93C06EN NM93CS06EMT8 NM93 |
256-Bit Serial CMOS EEPROM (MICROWIRE?/a> Synchronous Bus) The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 16 X 16 MICROWIRE BUS SERIAL EEPROM, PDIP8 Card Edge Connector; No. of Contacts:40; Pitch Spacing:0.1" RoHS Compliant: Yes 256-Bit Serial CMOS EEPROM (MICROWIRE⑩ Synchronous Bus) 256-BIT SERIAL CMOS EEPROM (MICROWIRE⒙ SYNCHRONOUS BUS) 256-Bit Serial CMOS EEPROM (MICROWIRE Synchronous Bus) 256-Bit Serial CMOS EEPROM (MICROWIRE?Synchronous Bus)
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Fairchild Semiconductor, Corp. EEPROM Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
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HSD16M64B8A HMD16M64B8A-10 HMD16M64B8A-10L HMD16M6 |
The HSD16M64B8A is a 16M x 64 bit Synchronous Dynamic RAM high density memory module. Synchronous DRAM Module 128Mbyte (16Mx64-Bit), SO-DIMM, 4Banks, 4K Ref., 3.3V
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List of Unclassifed Manufacturers ETC Hanbit Electronics Co.,Ltd
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MCM67J618AFN5 MCM67J618AFN7 MCM69D536TQ6R |
64K x 18 bit burstRAM synchronous fast static RAM 32K x 36 Bit Synchronous Dual I/O, Dual Address SRAM
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Motorola
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K5L5628JTM-DH18 K5L5628JBM K5L5628JBM-DH18 K5L5628 |
256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM
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SAMSUNG[Samsung semiconductor]
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74HC163D 74HC163PW 74HC163DB 74HC163N 74HCT163N 74 |
74HC/HCT163; Presettable synchronous 4-bit binary counter; synchronous reset
|
Philips
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HD74LV163ATELL HD74LV163A HD74LV163AFPEL |
Standard IC>General-Purpose Logics>HD74LV-A Series Synchronous 4-bit Binary Counter (Synchronous Clear)
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Renesas Electronics Corporation
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IDT74LVC161A 74LVC161A_DS_88829 IDT74LVC161AQ8 |
3.3V CMOS Preset Table Synchronous 4-Bit Binary Counter with Asynchronous Reset, 5.0V Tolerant I/O From old datasheet system 3.3V CMOS PRESETTABLE SYNCHRONOUS 4-BIT BINARY COUNTER
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IDT
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M12L64322A-6TG M12L64322A-5BG |
512K x 32 Bit x 4 Banks Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86 512K x 32 Bit x 4 Banks Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 4.5 ns, PBGA90
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Elite Semiconductor Memory Technology, Inc.
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HY57V161610D HY57V161610DTC-10 HY57V161610DTC-5 HY |
2 Banks x 512K x 16 Bit Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50 2 Banks x 512K x 16 Bit Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50 SDRAM - 16Mb
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Hynix Semiconductor, Inc. Hynix Semiconductor Inc.
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K7A803601M K7A801801M K7A801809B K7A803609B |
256Kx36 & 512Kx18 Synchronous SRAM 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM 256K x 36 & 512K x 18-Bit Synchronous Pipelined Burst SRAM Data Sheet
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SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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K7A403200B K7A403200B-QC K7A403201B K7A403201B-QC |
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM 128Kx36/x32 & 256Kx18 Synchronous SRAM
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Samsung Electronic SAMSUNG[Samsung semiconductor]
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